hotellemcasadeicervia.it » Other » Electron Spin-Polarization via nano-Electronics Circuits: Spintronics Applications of Zeeman and Aharonov-Bohm Effects on Electron Transport in a Double Quantum Dot Ring

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**Author:** Abigail Perkins,Eric Hedin,Yong Joe

**Category:** Science & Mathematics

**Language:** English

**Publisher:** LAP LAMBERT Academic Publishing (January 13, 2011)

**Pages:** 96 pages

**ISBN:** 3843389497

**ISBN13:** 978-3843389495

**Rating:** 4.8

**Votes:** 213

**Other formats:** rtf azw doc lrf

A mesoscale Aharonov-Bohm (AB) ring with a quantum dot (QD) embedded in each arm is studied with a tight-binding model for unique transmission properties arising from a combination of AB effects and Zeeman splitting of the QD energy levels

A mesoscale Aharonov-Bohm (AB) ring with a quantum dot (QD) embedded in each arm is studied with a tight-binding model for unique transmission properties arising from a combination of AB effects and Zeeman splitting of the QD energy levels. Theoretical analysis of this system has shown that resonance sharpening of the AB oscillation peaks occurs in a balanced ring near resonance, giving sensitive flux-dependence transmission. Combining this effect with Zeeman splitting allows sensitive control of the spin-polarized output of the device.

Spin-dependent effects may arise from interactions of the electron with an external . Computational analysis of the spin-polarized electron transport through th. .

Spin-dependent effects may arise from interactions of the electron with an external magnetic field or with magnetic properties of the conduction material. Our work considers solid-state Quantum Dots (QD''s) in an Aharonov-Bohm (AB) ring interferometer, with externally applied magnetic fields. Computational analysis of the spin-polarized electron transport through the device illustrates the principles and promise of such devices in spintronics.

A mesoscale Aharonov–Bohm (AB) ring with a quantum dot (QD) embedded in each arm is computationally modeled for unique transmission properties arising from a combination of AB effects and Zeeman splitting of the QD energy levels.

The quantum dot spin-polarizer may also be used to spin-polarize . When building devices, it is often more useful to confine the electrons in a thin layer of GaAs that is sandwiched between two thicker layers of AlGaAs.

The quantum dot spin-polarizer may also be used to spin-polarize currents, but in combination with multiple Aharonov-Bohm rings, a stronger spin-polarized current may be produced. iv ACKNOWLEDGMENTS I would first like to thank Dr. Eric Hedin for all of his hard work, encouragement, and patience while he worked with me for the past two years.

A nanoscale ring structure, typically referred to as an Aharonov-Bohm . Combined Aharonov–Bohm and Zeeman spin-polarization effects in a double quantum dot ring.

A nanoscale ring structure, typically referred to as an Aharonov-Bohm (AB) ring, with a quantum dot (QD) embedded in each arm serves a unit cell in a chain-like structure. The transmission through the device is presented as a function of the number of rings in the chain. Zeeman-splitting of the QD energy levels is also modeled and its effects are analyzed. Distinct transmission bands form as the ring number increases.

Aharonov–Casher Effect. Let us consider the Aharonov–Bohm and Aharonov–Casher effects from the gauge invariance point of view. Another related effect occurs when a particle with non-zero magnetic moment. This results in an effective Zeeman Hamiltonian, HZ≡−μ⋅H. The similarity of Eqs (. 92) and (. 05) is striking. In Eq. (. 92), Φ∕L. is the vector potential on the ring responsible for the Aharonov–Bohm effect, whereas in Eq. 05), ΦACσz∕L.

hm rings; quantum dots; Zeeman spin splitting; transmission; current-voltage.

Автор: James Cutright, Eric Hedin und Yong Joe Название: Electron .

161 . Electron-electron interaction effects in spin relaxation in. Electron-electron interaction effects in spin relaxation in GaAs. 161 . Spin relaxation in silicon. 163 F. Spin relaxation of an electron confined in a quantum dot . A. Semiconductor spintronics In a narrow sense spintronics refers to spin electronics, the phenomena of spin-polarized transport in metals and semiconductors. The goal of this applied spintronics is to find effective ways of controlling electronic properties, such as the current or accumulated charge, by spin or magnetic field, as well as of controlling spin or magnetic properties by electric currents or gate voltages.